Darby Feldwinn

Darby Feldwinn
Lecturer PSOE

Contact Phone

(805) 893-2127

Office Location

3649B PSB-N


Chemistry Education


Darby Feldwinn received her PhD from UCSD, where she worked in Dr. Andrew Kummel's laboratory researching oxides/IIIV semiconductor interfaces. During her graduate career she first took an interest in teaching and won the teaching assistant excellence award. After graduating she stayed on at UCSD for an additional year as a postdoc where she continued her research and taught general chemistry. Darby joined the UCSB faculty in 2009.


Teaching Website: http://www.chem.ucsb.edu/~feldwinn/

Research Objective 

My primary research focus is on undergrad education with an emphasis on encouraging students to consider careers as secondary school math or science teachers. In addition, I realize the importance of getting elementary students excited about science at a young age and exposing them to the university environment through outreach programs.


Selected Research Publications

J.B. Clemens, S.R. Bishop, D.L. Feldwinn, R. Droopad, and A.C. Kummel "Initial Stages of the Autocatalytic Oxidation of the InAs(001)-(4x2)/c(8x2) Surface by Molecular Oxygen," Surface Science 604, (14): 2230-2239 (July 15 2009).

J. Shen, D.L. Winn, W. Melitz, J.B. Clemens, and A.C. Kummel "Real Space Surface Reconstructions of Decapped As-rich In0.53Ga0.47As(001)-(2x4)," ECS Transactions 16, (5) 463 (2008).

D.L. Winn, T.J. Grassman, and A.C. Kummel "Electronic Properties of Adsorbates on In0.37Ga0.63As(001)-(2x4)," ECS Transactions. 11, (4) 441 (Oct 12 2007).

D.L. Winn, M.J. Hale, T.J. Grassman, J.Z. Sexton, A.C. Kummel, R. Droopad, and M. Passlack "Electronic Properties of Adsorbates on GaAs(001)-c(2x8)/(2x4)," J. Chem. Phys. 127, (13): 134705 (Oct 7 2007).

D.L. Winn, M.J. Hale, T.J. Grassman, A.C. Kummel, R. Droopad, and M. Passlack "Direct and Indirect Causes of Fermi Level Pinning at the SiO/GaAs Interface," J. Chem. Phys. 126, (8): 084703 (Feb 28 2007).

M.J. Hale, D.L. Winn, T.J. Grassman, A.C. Kummel, R. Droopad "Chemical Resolved Scanning Tunneling Microscopy Imaging of Al on p-type Al0.1Ga0.9As(001)-c(2x8)/(2x4)," J. Chem. Phys. 122, (12): 124702 (Mar 22 2005).

M.J. Hale, J.Z. Sexton, D.L. Winn, M. Passlack, and A.C. Kummel "The Influence of Bond Flexibility and Molecular Size on the Chemically Selective Bonding of In2O and Ga2O on GaAs(001)-c(2x8)/(2x4)," J. Chem. Phys. 120, (12): 5745-5754 (MAR 22 2004).